a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 10 ma 40 v bv ceo i c = 50 ma 24 v bv ebo i e = 100 a 3.3 v i ebo v eb = 2.0 v 10 a i ces v ce = 32 v 200 na i cbo v cb = 20 v 100 na h fe v ce = 18 v i c = 110 ma 15 85 --- c cb v cb = 10 f = 1.0 mhz 0.70 pf p 1db g 1db v ce = 18 v i c = 110 ma f = 2.0 ghz 28 8.0 29 9.0 35 dbm dbm % linear power transistor HXTR5104 description: the asi HXTR5104 is a common base device designed for high poutput power and gain at vhf, uhf, and microwave frequency applications. features include: ? high gain ? hermetic package ? high power output maximum ratings i c 250 ma v cbo 45 v v ceo 27 v p diss 4.0 w @ t c = 25 c t j -65 c to+200 c t stg -65 c to+200 c jc 44 c/w package style 100 4l
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